Compensation technique for luminance degradation in electro-luminance devices

ABSTRACT

A method and system for compensation for luminance degradation in electro-luminance devices is provided. The system includes a pixel circuit having a light emitting device, a storage capacitor, a plurality of transistors, and control signal lines to operate the pixel circuit. The storage capacitor is connected or disconnected to the transistor and a signal line(s) when programming and driving the pixel circuit.

FIELD OF INVENTION

The present invention relates to electro-luminance device displays, andmore specifically to a driving technique for the electro-luminancedevice displays to compensate for luminance degradation.

BACKGROUND OF THE INVENTION

Electro-luminance displays have been developed for a wide variety ofdevices, such as cell phones. In particular, active-matrix organiclight-emitting diode (AMOLED) displays with amorphous silicon (a-Si),poly-silicon, organic, or other driving backplane have become moreattractive due to advantages, such as feasible flexible displays, itslow cost fabrication, high resolution, and a wide viewing angle.

An AMOLED display includes an array of rows and columns of pixels, eachhaving an organic light-emitting diode (OLED) and backplane electronicsarranged in the array of rows and columns. Since the OLED is a currentdriven device, the pixel circuit of the AMOLED should be capable ofproviding an accurate and constant drive current.

There is a need to provide a method and system that is capable ofproviding constant brightness with high accuracy and reducing the effectof the aging of the pixel circuit.

SUMMARY OF THE INVENTION

It is an object of the invention to provide a method and system thatobviates or mitigates at least one of the disadvantages of existingsystems.

In accordance with an aspect of the present invention there is provideda pixel circuit including a light emitting device and a storagecapacitor having a first terminal and a second terminal. The pixelcircuit includes a first transistor having a gate terminal, a firstterminal and a second terminal where the gate terminal is connected to afirst select line. The pixel circuit includes a second transistor havinga gate terminal, a first terminal and a second terminal where the firstterminal is connected to the second terminal of the first transistor,and the second terminal is connected to the light emitting device. Thepixel circuit includes a third transistor having a gate terminal, afirst terminal and a second terminal where the gate terminal isconnected to a second select line, the first terminal is connected tothe second terminal of the first transistor, and the second terminal isconnected to the gate terminal of the second transistor and the firstterminal of the storage capacitor. The pixel circuit includes a fourthtransistor having a gate terminal, a first terminal and a secondterminal where the gate terminal is connected to a third select line,the first terminal is connected to the second terminal of the storagecapacitor, and the second terminal is connected to the second terminalof the second transistor and the light emitting device. The pixelcircuit includes a fifth transistor having a gate terminal, a firstterminal and a second terminal where the gate terminal is connected tothe second select line, the first terminal is connected to a signalline, and the second terminal is connected to the first terminal of theforth transistor and the second terminal of the storage capacitor.

In the above pixel circuit, the third select line may be the firstselect line.

The above pixel circuit may include a sixth transistor having a gateterminal, a first terminal and a second terminal where the gate terminalis connected to the second select line, the first terminal is connectedto the first terminal of the second transistor, and the second terminalis connected to a bias current line.

In accordance with a further of the present invention there is provideda display system including a display array formed by the pixel circuit,and a driving module for programming and driving the pixel circuit.

In accordance with a further of the present invention there is provideda method for compensating for degradation of the light emitting devicein the pixel circuit. The method includes the steps of charging thestorage capacitor and discharging the storage capacitor. The step ofcharging the storage capacitor includes connecting the storage capacitorto the signal line. The method includes the step of disconnecting thestorage capacitor from the signal line and connecting the secondterminal of the storage capacitor to the second terminal of the secondtransistor.

In accordance with a further of the present invention there is provideda method for compensating for shift in a threshold voltage of thetransistor in the pixel circuit. The method includes the steps ofcharging the storage capacitor and discharging the storage capacitor.The step of charging the storage capacitor includes connecting thestorage capacitor to the signal line. The method includes the step ofdisconnecting the storage capacitor from the signal line and connectingthe second terminal of the storage capacitor to the second terminal ofthe second transistor.

In accordance with a further of the present invention there is provideda method for compensating for ground bouncing or IR drop in the pixelcircuit. The method includes the steps of charging the storage capacitorand discharging the storage capacitor. The step of charging the storagecapacitor includes connecting the storage capacitor to the signal lineand the bias current line. The method includes the step of disconnectingthe storage capacitor from the signal line and the bias current line andconnecting the second terminal of the storage capacitor to the secondterminal of the second transistor.

This summary of the invention does not necessarily describe all featuresof the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other features of the invention will become more apparent fromthe following description in which reference is made to the appendeddrawings wherein:

FIG. 1A is a diagram illustrating an example of a pixel circuit alongwith its control signal lines to which a pixel driving scheme inaccordance with an embodiment of the present invention is applied;

FIG. 1B is a timing diagram illustrating an example of a method ofoperating the pixel circuit of FIG. 1A;

FIG. 2 is a graph illustrating a simulation result for FIGS. 1A-1B;

FIG. 3 is a graph illustrating another simulation result for FIGS.1A-1B;

FIG. 4A is a diagram illustrating an example of a pixel circuit alongwith its control signal lines to which the pixel driving scheme inaccordance with another embodiment of the present invention is applied;

FIG. 4B is a timing diagram illustrating an example of a method ofoperating the pixel circuit of FIG. 4A;

FIG. 5A is a diagram illustrating an example of a pixel circuit alongwith its control signal lines to which the pixel driving scheme inaccordance with a further embodiment of the present invention isapplied;

FIG. 5B is a timing diagram illustrating an example of a method ofoperating the pixel circuit of FIG. 5A;

FIG. 6 is a diagram illustrating an example of a display system with adisplay array having the pixel circuit of FIG. 1A;

FIG. 7 is a timing diagram illustrating an example of a method ofoperating the display array of FIG. 6;

FIG. 8 is a diagram illustrating an example of a display system with adisplay array having the pixel circuit of FIG. 4A;

FIG. 9 is a timing diagram illustrating an example of a method ofoperating the display array of FIG. 8;

FIG. 10 is a diagram illustrating an example of a display system with adisplay array having the pixel circuit of FIG. 5A; and

FIG. 11 is a timing diagram illustrating an example of a method ofoperating the display array of FIG. 10.

DETAILED DESCRIPTION

Embodiments of the present invention are described using a pixel circuithaving a light emitting device, such as an organic light emitting diode(OLED), and a plurality of transistors. However, the pixel circuit mayinclude any light emitting device other than the OLED. The transistorsin the pixel circuit may be n-type transistors, p-type transistors orcombinations thereof. The transistors in the pixel circuit may befabricated using amorphous silicon, nano/micro crystalline silicon, polysilicon, organic semiconductors technologies (e.g. organic TFT),NMOS/PMOS technology or CMOS technology (e.g. MOSFET). A display havingthe pixel circuit may be a single color, multi-color or a fully colordisplay, and may include one or more than one electroluminescence (EL)element (e.g., organic EL). The display may be an active matrix lightemitting display. The display may be used in DVDs, personal digitalassistants (PDAs), computer displays, or cellular phones.

In the description, “pixel circuit” and “pixel” may be usedinterchangeably. In the description below, “signal” and “line” may beused interchangeably. In the description below, “connect (orconnected)”and “couple (or coupled)” may be used interchangeably, andmay be used to indicate that two or more elements are directly orindirectly in physical or electrical contact with each other.

The embodiments of the present invention involve a driving method ofdriving the pixel circuit, which includes an in-pixel compensationtechnique for compensating for at least one of OLED degradation,backplane instability (e.g. TFT threshold shift), and ground bouncing(or IR drop). The driving scheme allows the pixel circuit to provide astable luminance independent of the shift of the characteristics ofpixel elements due to, for example, the pixel aging under prolongeddisplay operation and process variation. This enhances the brightnessstability of the OLED and efficiently improves the display operatinglifetime.

FIG. 1A illustrates an example of a pixel circuit along with its controlsignal lines to which a pixel driving scheme in accordance with anembodiment of the present invention is applied. The pixel circuit 100 ofFIG. 1A includes transistors 102-110, a storage capacitor 112 and anOLED 114. The pixel circuit 100 is connected to three select lines SEL1,SEL2, and SEL3, a signal line VDATA, a voltage line VDD, and a commonground.

The transistors 102-110 may be amorphous silicon, poly silicon, ororganic thin-film transistors (TFT) or standard NMOS in CMOS technology.It would be appreciated by one of ordinary skill in the art that thepixel circuit 100 can be rearranged using p-type transistors.

The transistor 104 is a driving transistor. The source and drainterminals of the driving transistor 104 are connected to the anodeelectrode of the OLED 114 and the source terminal of the transistor 102,respectively. The gate terminal of the driving transistor 104 isconnected to the signal line VDATA through the transistor 110 and isconnected to the source terminal of the transistor 106. The drainterminal of the transistor 106 is connected to the source terminal ofthe transistor 102 and its gate terminal is connected to the select lineSEL2.

The drain terminal of the transistor 108 is connected to the sourceterminal of the transistor 110, its source terminal is connected to theanode of the OLED 114, and its gate terminal is connected to the selectline SEL3.

The drain terminal of the transistor 110 is connected to the signal lineVDATA, and its gate terminal is connected to the select line SEL2.

The driving transistor 104, the transistor 106 and the storage capacitor112 are connected at node A1. The transistors 108 and 110 and thestorage capacitor 112 are connected at node B1.

FIG. 1B illustrates an example of a method of operating the pixelcircuit 100 of FIG. 1A. The pixel circuit 100 of FIG. 1 A includesn-type transistors. However, it would be understood by one of ordinaryskill in the art that the method of FIG. 1B is applicable to a pixelcircuit having p-type transistors.

Referring to FIGS. 1A-1B, the operation of the pixel circuit 100includes two operating cycles: programming cycle 120 and driving cycle122. At the end of the programming cycle 120, node A1 is charged to(V_(P)+V_(T)+ΔV_(OLED)) where V_(P) is a programming voltage, V_(T) isthe threshold voltage of the transistor 104, and ΔV_(OLED) is the OLEDvoltage shift under bias stress.

The programming cycle 120 includes two sub-cycles: pre-charging P11 andcompensation P12, hereinafter referred to as pre-charging sub-cycle P11and compensation sub-cycle P12, respectively.

During the pre-charging sub-cycle P11, the select lines SEL1 and SEL2are high and SEL3 is low, resulting in turning the transistors 102, 106and 110 on, and the transistor 108 off respectively. The voltage atVDATA is set to (V_(OLEDi)-V_(P)). “V_(P)” is a programming voltage. “i”represents initial voltage of OLED. “V_(OLEDi)” is a constant voltageand can be set to the initial ON voltage of the OLED 114. However,V_(OLEDi) can be set to other voltages such as zero. At the end of thepre-charging sub-cycle P11, the storage capacitor 112 is charged with avoltage close to (VDD+V_(P)−V_(OLEDi)).

During the compensation sub-cycle P12, the select line SEL2 is high sothat the transistors 106 and 110 are on, and the select lines SEL1 andSEL3 are low so that the transistors 102 and 108 are off. As a result,the storage capacitor 112 starts discharging through the transistor 104and the OLED 114 until the current through the driving transistor 104and the OLED 114 becomes close to zero. Consequently, the voltage closeto (V_(T)+V_(P)+V_(OLED)−V_(OLEDe)) is stored in the storage capacitor112 where V_(OLED) is the ON voltage of the OLED 114.

During the driving cycle 122, the select line SEL2 is low so that thetransistors 106 and 110 are off, and the select lines SEL1 and SEL3 arehigh so that the transistors 102 and 108 are on. As a result, thestorage capacitor 112 is disconnected from the signal line VDATA and isconnected to the source of the driving transistor 104.

If the driving transistor 104 is in saturation region, a current closeto K(V_(P)+ΔV_(OLED))² goes through the OLED 114 until the nextprogramming cycle where K is the trans-conductance coefficient of thedriving transistor 104, and ΔV_(OLED)=V_(OLED)−V_(OLEDi)).

FIG. 2 illustrates an example of a simulation result for the operationof FIGS. 1A-1B. The graph of FIG. 2 represents OLED current during thedriving cycle 122 as a function of shift in its voltage. Referring toFIGS. 1A, 1B and 2, it can be seen that as ΔV_(OLED) increases overtime, the driving current of the OLED 114 is also increased. Thus, thepixel circuit 100 compensates for luminance degradation of the OLED 114by increasing the driving current of the OLED 114.

FIG. 3 illustrates an example of another simulation result for theoperation of FIGS. 1A-1B. The graph of FIG. 3 represents OLED currentduring the driving cycle 122 as a function of shift in the thresholdvoltage of the driving transistor 104. Referring to FIGS. 1A, 1B and 3,the pixel circuit 100 compensates for shift in the threshold voltage ofthe driving transistor 104 since the driving current of the OLED 114 isindependent of the threshold of the driving transistor 104. The resultas shown in FIG. 3 emphasizes the OLED current stability for 4-V shiftin the threshold of the driving transistor.

FIG. 4A illustrates an example of a pixel circuit along with its controlsignal lines to which the pixel driving scheme in accordance withanother embodiment of the present invention is applied. The pixelcircuit 130 of FIG. 4A includes five transistors 132-140, a storagecapacitor 142 and an OLED 144. The pixel circuit 130 is connected to twoselect lines SEL1 and SEL2, a signal line VDATA, a voltage line VDD, anda common ground.

The transistors 132-140 may be same or similar to the transistors102-110 of FIG. 1A. The transistors 132-140 may be amorphous silicon,poly silicon, or organic TFT or standard NMOS in CMOS technology. Thestorage capacitor 142 and the OLED 140 are same or similar to thestorage capacitor 112 and the OLED 114 of FIG. 1A, respectively.

The transistor 134 is a driving transistor. The source and drainterminals of the driving transistor 134 are connected to the anodeelectrode of the OLED 144 and the source of the transistor 132,respectively. The gate terminal of the driving transistor 134 isconnected to the signal line VDATA through the transistor 140, and isconnected to the source terminal of the transistor 136. The drainterminal of the transistor 136 is connected to the source terminal ofthe transistor 132 and its gate terminal is connected to the select lineSEL2.

The drain terminal of the transistor 138 is connected to the sourceterminal of the transistor 140, its source terminal is connected to theanode of the OLED 144, and its gate terminal is connected to the selectline SEL1.

The drain terminal of the transistor 140 is connected to the signal lineVDATA, and its gate terminal is connected to the select line SEL2.

The driving transistor 134, the transistor 136 and the storage capacitor142 are connected at node A2. The transistors 138 and 140 and thestorage capacitor 142 are connected at node B2.

FIG. 4B illustrates an example of a method of operating the pixelcircuit 130 of FIG. 4A. The pixel circuit 130 of FIG. 4A includes n-typetransistors. However, it would be understood by one of ordinary skill inthe art that the method of FIG. 4B is applicable to a pixel circuithaving p-type transistors.

Referring to FIGS. 4A-4B, the operation of the pixel circuit 130includes two operating cycles: programming cycle 150 and driving cycle152. At the end of the programming cycle 150, node A2 is charged to(V_(P)+V_(T)+ΔV_(OLED)) where V_(P) is a programming voltage, V_(T) isthe threshold voltage of the transistor 134, and ΔV_(OLED) is the OLEDvoltage shift under bias stress.

The programming cycle 150 includes two sub-cycles: pre-charging P21 andcompensation P22, hereinafter referred to as pre-charging sub-cycle P21and compensation sub-cycle P22, respectively.

During the pre-charging sub-cycle P21, the select lines SEL1 and SEL2are high, and VDATA goes to a proper voltage V_(OLEDi) that turns offthe OLED 144. V_(OLEDi) is a predefined voltage which is less thanminimum ON voltage of the OLEDs. At the end of the pre-chargingsub-cycle P21, the storage capacitor 142 is charged with a voltage closeto (VDD+V_(OLEDi)). The voltage at VDATA is set to (V_(OLEDi)-V_(P))where V_(P) is a programming voltage.

During the compensation sub-cycle P22, the select line SEL2 is high sothat the transistors 136 and 140 are on, and the select line SELL is lowso that the transistors 132 and 138 are off. The voltage of VDATA at P22is different from that of P21 to properly charge A2 to(V_(P)+V_(T)+ΔV_(OLED)) at the end of P22. As a result, the storagecapacitor 142 starts discharging through the driving transistor 134 andthe OLED 144 until the current through the driving transistor 134 andthe OLED 144 becomes close to zero. Consequently, the voltage close to(V_(T)+V_(P)+V_(OLED)−V_(OLEDi)) is stored in the storage capacitor 142where V_(OLED) is the ON voltage of the OLED 144.

During the driving cycle 152, the select SEL2 is low, resulting inturning the transistors 136 and 140 off. The select line SEL1 is high,resulting in turning the transistors 132 and 138 on. As a result, thestorage capacitor 142 is disconnected from the signal line VDATA and isconnected to the source terminal of the driving transistor 134

If the driving transistor 134 is in saturation region, a current closeto K(V_(P)+ΔV_(OLED))² goes through the OLED 144 until the nextprogramming cycle where K is the trans-conductance coefficient of thedriving transistor 134, and ΔV_(OLED)=V_(OLED)−V_(OLEDi). As a result,the driving current of the OLED 144 increases, as the ΔV_(OLED)increases over time. Thus, the pixel circuit 130 compensates forluminance degradation of the OLED 144 by increasing the driving currentof the OLED 144.

Moreover, the pixel circuit 130 compensates for shift in thresholdvoltage of the driving transistor 134 and so the driving current of theOLED 144 is independent of the threshold V_(T).

FIG. 5A illustrates an example of a pixel circuit along with its controlsignal lines to which the pixel driving scheme in accordance with afurther embodiment of the present invention is applied. The pixelcircuit 160 of FIG. 5A includes six transistors 162-172, a storagecapacitor 174 and an OLED 176. The pixel circuit 160 is connected to twoselect lines SEL1 and SEL2, a signal line VDATA, a voltage line VDD, abias current line IBIAS, and a common ground.

The transistors 162-172 may be amorphous silicon, poly silicon, ororganic TFT or standard NMOS in CMOS technology. The storage capacitor174 and the OLED 176 are same or similar to the storage capacitor 112and the OLED 114 of FIG. 1A, respectively.

The transistor 164 is a driving transistor. The source and drainterminals of the driving transistor 164 are connected to the anodeelectrode of the OLED 176 and the source terminal of the transistor 162,respectively. The gate terminal of the driving transistor 164 isconnected to the signal line VDATA through the transistor 170 and isconnected to the source terminal of the transistor 166. The drainterminal of the transistor 166 is connected to the source terminal ofthe transistor 162 and its gate terminal is connected to the select lineSEL2.

The drain terminal of the transistor 168 is connected to the sourceterminal of the transistor 170, its source terminal is connected to theanode of the OLED 176, and its gate terminal is connected to the selectline SEL1 .

The drain terminal of the transistor 170 is connected to VDATA, and itsgate terminal is connected to the select line SEL2.

The drain terminal of the transistor 172 is connected to the bias lineIBIAS, its gate terminal is connected to the select line SEL2, and itssource terminal is connected to the source terminal of the transistor162 and the drain terminal of the transistor 164.

The driving transistor 164, the transistor 166 and the storage capacitor174 are connected at node A3. The transistors 168 and 170 and thestorage capacitor 174 are connected at node B3.

FIG. 5B illustrates an example of a method of operating the pixelcircuit 160 of FIG. 5A. The pixel circuit 160 of FIG. 5A includes n-typetransistors. However, it would be understood by one of ordinary skill inthe art that the method of FIG. 5B is applicable to a pixel circuithaving p-type transistors.

Referring to FIGS. 5A-5B, the operation of the pixel circuit 160includes two operating cycles: programming cycle 180 and driving cycle182. At the beginning of the second operating cycle 182, node A3 ischarged to (V_(P)+V_(T)+ΔV_(OLED)) where V_(P) is a programming voltage,V_(T) is the threshold voltage of the transistor 164, and ΔV_(OLED) isthe OLED voltage shift under bias stress. V_(T) and ΔV_(OLED) aregenerated by large IBIAS resulting in a fast programming.

During the first operating cycle 180, the select line SEL1 is low, theselect line SEL2 is high, and VDATA goes to a proper voltage(V_(OLEDi)-V_(P)) where VP is a programming voltage. This proper voltageis a predefined voltage which is less than minimum ON voltage of theOLEDs. Also, the bias line IBIAS provides bias current (referred to asI_(BIAS)) to the pixel circuit 160. At the end of this cycle node A3 ischarged to V_(BIAS)+V_(T)+V_(OLED)(I_(BIAS)) where V_(BIAS) is relatedto the bias current I_(BIAS), and V_(OLED)(I_(BIAS)) is the OLED 176voltage corresponding to I_(BIAS). Voltage at node A3 is independent ofV_(P) at the end of 180. Charging to (V_(P)+V_(T)+ΔV_(OLED)) happens atthe beginning of 182.

During the second operating cycle 182, the select line SEL1 is high andthe select line SEL2 is low. As a result node B3 is charged toV_(OLED)(I_(P)) where V_(OLED)(I_(P)) is the OLED 176 voltagecorresponding to the pixel current. Thus, the gate-source voltage of thetransistor 164 becomes (V_(P)+ΔV_(OLED)+V_(T)) whereΔV_(OLED)=V_(OLED)(I_(BIAS))−V_(OLEDi). Since the OLED voltage increasesfor a constant luminance while its luminance decreases, the gate-sourcevoltage of the transistor 164 increases resulting in higher OLEDcurrent. Consequently, the OLED 176 luminance remains constant.

FIG. 6 illustrates an example of a display system 200 including thepixel circuit 100 of FIG. 1A. The display array 202 of FIG. 6 includes aplurality of pixel circuit 100 arranged in rows and columns, and mayform an active matrix organic light emitting diode (AMOLED) display.VDATAj (j=1, 2, . . . ) corresponds to VDATA of FIG. 1A. SEL1 k, SEL2 kand SEL3 k (k=1, 2, . . . ) correspond to SEL1, SEL2 and SEL3 of FIG.1A, respectively. The select lines SEL1 k, SEL2 k and SEL3 k are sharedamong the pixels in the common row of the display array 202. The signalline VDATAj is shared among the pixels in the common column of thedisplay array 202.

The display system 200 includes a driving module 204 having an addressdriver 206, a source driver 208, and a controller 210. The select linesSEL1 k, SEL2 k and SEL3 k are driven by the address driver 206. Thesignal line VDATAj is driven by the source driver 208. The controller210 controls the operation of the address driver 206 and the sourcedriver 208 to operate the display array 202.

The waveforms shown in FIG. 1B are generated by the driving module 204.The driver module 204 also generate the programming voltage. Thecompensation for OLED degradation, threshold voltage shift and groundbouncing occur in pixel. During the third cycle (122 of FIG. 1B), thegate-source voltage of the driving transistor is defined by the voltagestored in the storage capacitor (112 of FIG. 1). Therefore, the groundbouncing does not change the gate-source voltage and so the pixelcurrent become stable.

FIG. 7 illustrates an example of a method of operating the display arrayof FIG. 6. an example of In FIG. 7, Row(i) (i=1, 2, . . . ) represents arow of the display array 202 of FIG. 6. “120” and “122” in FIG. 7represent “programming cycle” and “driving cycle” and correspond tothose of FIG. 1B, respectively. “P11” and “P12” in FIG. 7 represent“pre-charging sub-cycle” and “compensation sub-cycle” and correspond tothose of FIG. 1B, respectively. The compensation sub-cycle P11 in a rowand the pre-charging sub-cycle P12 in an adjacent row are performed inparallel. Further, during the driving cycle 122 in a row, thecompensation sub-cycle P22 is performed in an adjacent row. The displaysystem 200 of FIG. 6 is designed to implement the parallel operation,i.e., having capability of carrying out different cycles independentlywithout affecting each other.

FIG. 8 illustrates an example of a display system 300 including thepixel circuit 130 of FIG. 4A. The display array 302 of FIG. 8 includes aplurality of pixel circuit 130 arranged in rows and columns, and mayform an AMOLED display. VDATAj (j=1, 2, . . . ) corresponds to VDATA ofFIG. 4A. SEL1 k and SEL2 k (k=1, 2, . . . ) correspond to SEL1 and SEL2of FIG. 4A, respectively. The select lines SEL1 k and SEL2 k are sharedamong the pixels in the common row of the display array 302. The signalline VDATAj is shared among the pixels in the common column of thedisplay array 302.

The display system 300 includes a driving module 304 having an addressdriver 306, a source driver 308, and a controller 310. The select linesSEL1 k and SEL2 k are driven by the address driver 306. The signal lineVDATAj is driven by the source driver 308. The controller 310 controlsthe operation of the address driver 306 and the source driver 308 tooperate the display array 302.

The waveforms shown in FIG. 4B are generated by the driving module 304.The driver module 304 also generates the programming voltage. Thecompensation for OLED degradation, threshold voltage shift and groundbouncing occur in pixel. During the third cycle (152 of FIG. 4B), thegate-source voltage of the driving transistor is defined by the voltagestored in the storage capacitor (142 of FIG. 4A). Therefore, the groundbouncing does not change the gate-source voltage and so the pixelcurrent become stable.

FIG. 9 illustrates an example of a method of operating the display arrayof FIG. 8. an example of In FIG. 9, Row(i) (i=1, 2, . . . ) represents arow of the display array 302 of FIG. 8. “150” and “152” in FIG. 9represent “programming cycle” and “driving cycle” and correspond tothose of FIG. 4B, respectively. “P21” and “P22” in FIG. 9 represent“pre-charging sub-cycle” and “compensation sub-cycle” and correspond tothose of FIG. 4B, respectively. The compensation sub-cycle P21 in a rowand the pre-charging sub-cycle P22 in an adjacent row are performed inparallel. Further, during the driving cycle 152 in a row, thecompensation sub-cycle P22 is performed in an adjacent row. The displaysystem 300 of FIG. 8 is designed to implement the parallel operation,i.e., having capability of carrying out different cycles independentlywithout affecting each other.

FIG. 10 illustrates an example of a display system 400 including thepixel circuit 160 of FIG. 5A. The display array 402 of FIG. 10 includesa plurality of pixel circuit 160 arranged in rows and columns, and is anAMOLED display. The display array 402 may be an AMOLED display. VDATAj(j=1, 2, . . . ) corresponds to VDATA of FIG. 4A. IBIASj (j=1, 2, . . .) corresponds to IBIAS of FIG. 4A. SEL1 k and SEL2 k (k=1, 2, . . . )correspond to SEL1 and SEL2 of FIG. 4A, respectively. The select linesSEL1 k and SEL2 k are shared among the pixels in the common row of thedisplay array 402. The signal line VDATAj and the bias line IBIASj areshared among the pixels in the common column of the display array 402.

The display system 400 includes a driving module 404 having an addressdriver 406, a source driver 408, and a controller 410. The select linesSEL1 k and SEL2 k are driven by the address driver 406. The signal lineVDATAj and the bias line IBIASj are driven by the source driver 408. Thecontroller 410 controls the operation of the address driver 406 and thesource driver 408 to operate the display array 402.

The waveforms shown in FIG. 5B are generated by the driving module 404.The driver module 404 also generate the programming voltage. Thecompensation for OLED degradation, threshold voltage shift and groundbouncing occur in pixel. During the second cycle 182 of FIG. 5B, thegate-source voltage of the driving transistor is defined by the voltagestored in the storage capacitor (174 of FIG. 5A). Therefore, the groundbouncing does not change the gate-source voltage and so the pixelcurrent become stable.

FIG. 11 illustrates an example of a method of operating the displayarray of FIG. 10. an example of In FIG. 9, Row(i) (i=1, 2, . . . )represents a row of the display array 402 of FIG. 10. “180” and “182” inFIG. 11 correspond to those of FIG. 5B, respectively. For the rows ofthe display array 402, the programming cycle 180 is subsequentlyperformed. During the driving cycle 182 in a row, the programming cycle180 is performed in an adjacent row. The display system 400 of FIG. 10is designed to implement the parallel operation, i.e., having capabilityof carrying out different cycles independently without affecting eachother.

All citations are hereby incorporated by reference.

The present invention has been described with regard to one or moreembodiments. However, it will be apparent to persons skilled in the artthat a number of variations and modifications can be made withoutdeparting from the scope of the invention as defined in the claims.

1-30. (canceled)
 31. A pixel circuit comprising: a light emitting device; a storage capacitor for charging to a voltage that is a function of a programming voltage and the voltage of said light emitting device during a programming cycle; and a driving transistor for supplying, via a source terminal, a driving current to the light emitting device during a driving cycle, the driving transistor having a gate terminal connected to a first terminal of the storage capacitor, the driving transistor having a threshold voltage less than said initial voltage.
 32. The pixel circuit of claim 31, further comprising: a second transistor for providing a discharging connection between the first terminal of the storage capacitor and a drain terminal of the driving transistor during the programming cycle according to a second voltage signal supplied, via a second select line, to a gate terminal of the second transistor, the discharging connection providing a path to partially discharge the storage capacitor through the driving transistor and the light emitting device during the programming cycle.
 33. The pixel circuit of claim 31, wherein the storage capacitor is configured to be charged with said initial voltage during a pre-charging cycle having a duration less than a duration of the programming cycle, said initial voltage exceeding a compensated voltage, the compensated voltage being close to the sum of a programming voltage, a threshold voltage of the driving transistor, and a voltage drop of the light emitting device.
 34. The pixel circuit of claim 33, wherein the storage capacitor is configured to partially discharge during a compensation cycle having a duration less than the duration of the programming cycle, until the storage capacitor is charged with the compensated voltage and the current through the driving transistor and the light emitting device is close to zero.
 35. The pixel circuit of claim 33, wherein the compensated voltage is stored in the storage capacitor at the conclusion of the pre-charging cycle, and wherein the pre-charging cycle precedes the driving cycle of the pixel circuit.
 36. The pixel circuit of claim 31, wherein the light emitting device is configured to emit light responsive to the driving current flowing through the light emitting device, and wherein the driving current flowing through the light emitting device is controlled according to the gate-source voltage of the driving transistor during the driving cycle.
 37. The pixel circuit of claim 36, wherein the pixel circuit is configured to compensate for a shift in an on voltage of the light emitting device by allowing the storage capacitor to partially discharge through the light emitting device during the programming cycle such that the gate-source voltage of the driving transistor during the driving cycle accounts for the on voltage of the light emitting device.
 38. The pixel circuit of claim 36, wherein the pixel circuit is configured to compensate for a shift in the threshold voltage of the driving transistor by allowing the storage capacitor to partially discharge through the driving transistor during the programming cycle such that the gate-source voltage of the driving transistor during the driving cycle accounts for the threshold voltage of the driving transistor.
 39. The pixel circuit of claim 32, wherein the light emitting device is configured to emit light responsive to the driving current flowing through the light emitting device, and wherein the driving current flowing through the light emitting device is controlled according to the gate-source voltage of the driving transistor during the driving cycle.
 40. The pixel circuit of claim 39, wherein the pixel circuit is configured to compensate for a shift in an on voltage of the light emitting device by allowing the storage capacitor to partially discharge via the discharging connection during the programming cycle such that the gate-source voltage of the driving transistor during the driving cycle accounts for the on voltage of the light emitting device.
 41. The pixel circuit of claim 39, wherein the pixel circuit is configured to compensate for a shift in the threshold voltage of the driving transistor by allowing the storage capacitor to partially discharge via the discharging connection during the programming cycle such that the gate-source voltage of the driving transistor during the driving cycle accounts for the threshold voltage of the driving transistor.
 42. The pixel circuit of claim 31, wherein the light emitting device is an organic light emitting diode.
 43. The pixel circuit of claim 31, wherein the pixel circuit is incorporated in an active matrix organic light emitting diode display. 